Based on patented ECC architecture, UniRAM's ECC design can easily support variable data width without hardware redesign. Unlike the traditional ECC, which is difficult, if not impossible to characterize due to long and irregular lines, UniRAM ECC is built with highly regular structure and has no long lines. Therefore, it is easy to characterize and is insensitive to foundry process differences. Sub-nanosecond processing time is achieved with generic 0.13um process technology from leading silicon foundries independent of backend processes (like FSG vs. low-K).

ECC is integrated into a chip and/or system to detect and correct errors in real time. The corrected data is written back to the problem cells so the errors are not cumulative. Reliability, yield, and data integrity are significantly enhanced when ECC is integrated into memory and/or communication products.

Traditional redundancy approach requires laser repair and adds to backend complexity, and therefore costs. Furthermore, redundancy still suffers from soft error. ECC not only removes redundancy/laser repair but also eliminates soft error due to its real time correction capability. This is all done within sub-nanoseconds, so the device performance is not degraded.

Example ECC applications:
· Replaces redundancy
· Eliminate soft error
· Detects and corrects errors occurred during data transfer
· Data retention for Flash devices: Detects charge loss and restores to correct state automatically
· Doubles Flash density with multiple-level signal